23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8599618/8617121/08617569.pdf?arnumber=8617569
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers;Lecture Notes in Electrical Engineering;2023-11-29
2. A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications;ECS Journal of Solid State Science and Technology;2023-07-01
4. A Ku-Band Low Noise Amplifier Implemented in 0.15 µm Gallium Arsenide pHEMT Process;2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2022-12-12
5. A 23–31 GHz high‐gain GaN low‐noise amplifier using T‐type matching networks and multiple feedback techniques for broadband 5G millimeter‐wave applications;Microwave and Optical Technology Letters;2022-11-11
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