A Ku-Band Low Noise Amplifier Implemented in 0.15 µm Gallium Arsenide pHEMT Process-Reference-Cited by-同舟云学术

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A Ku-Band Low Noise Amplifier Implemented in 0.15 µm Gallium Arsenide pHEMT Process

Published:2022-12-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
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Author:

Chau Quoc Toan¹,Chakraborty Sudipta¹,Jones Andrew¹,Weerathunge Nethini¹,Kanungo Sayan²,Gorman Melissa¹

Affiliation:

1. School of Engineering, Macquarie University,Sydney,Australia

2. BITS-Pilani, Hyderabad Campus,Department of Electrical and Electronics Engineering,Hyderabad,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10046662/10046419/10047620.pdf?arnumber=10047620

Reference12 articles.

1. A Ku-Band Self-Biased Bidirectional Amplifier in $0.25\ \mu\mathrm{m}$ PHEMT Technology

2. High Gain and Low Noise MMIC Amplifier for Ku Band Applications

3. Ultralow-Noise Figure and High Gain Ku-Band Bulk CMOS Low-Noise Amplifier With Large-Size Transistor

4. A X-Ku -Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception;wang;2019 IEEE Asia-Pacific Microwave Conference (APMC),0

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