X- and Ku-band internally matched GaN amplifiers with more than 100W output power-Reference-Cited by-同舟云学术

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X- and Ku-band internally matched GaN amplifiers with more than 100W output power

Published:2012-10 Issue: Volume: Page:
ISSN:
Container-title:2012 42nd European Microwave Conference
language:
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Author:

Noto H.,Maehara H.,Uchida H.,Koyanagi M.,Utsumi H.,Nishihara J.,Otsuka H.,Yamanaka K.,Nakayama M.,Hirano Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6423128/6459071/06459316.pdf?arnumber=6459316

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra High Power X-Band Amplifier Utilizing non-Uniform Comb Lines for Stabilization;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

2. A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-11-30

3. Systematic design of hybrid high power microwave amplifiers using large gate periphery GaN HEMTs;AEU - International Journal of Electronics and Communications;2018-02

4. Recent Activities of Japanese Microwave Industry;IEICE Transactions on Electronics;2015

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