Recent Activities of Japanese Microwave Industry
Author:
Affiliation:
1. Information Technology R&D Center, Mitsubishi Electric Corp
2. NTT Docomo
3. Murata Manufacturing Co., Ltd.
4. Hitachi Research Laboratory, Hitachi Ltd.
5. Komukai Complex, Toshiba Corporation
6. Fujitsu Laboratories Ltd.
7. NEC Corp.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E98.C/7/E98.C_621/_pdf
Reference14 articles.
1. [1] H. Maehara, H. Uchida, N. Kosaka, E. Kuwata, K. Yamanaka, J. Nishihara, K. Kawashima, and M. Nakayama, “Internally Matched GaN FET at C-band with 220W Output Power and 56% Power Added Efficiency,” 2012 Asia Pacific Microwave Conference Dig., pp.358-360, Dec. 2012.
2. [2] H. Noto et al, “X- and Ku-band Internally Matched GaN Amplifiers with more than 100W output power,” 2012 European Microwave Integrated Circuits Conference Dig., pp.695-698, Oct. 2012.
3. [3] S. Miwa, Y. Kamo, Y. Kittaka, T. Yamasaki, Y. Tsukahara, T. Tanii, M. Kohno, S. Goto, and A. Shima, “A 67% PAE, 100 W GaN Power Amplifier with On-Chip Harmonic Tuning Circuits for C-band Space Applications,” 2011 IEEE MTT-S Int. Microwave Symp. Dig., WE3D-1, June 2011.
4. [4] S. Mizuta, Y. Suzuki, T. Hirota, and Y. Yamao, “Digital predistortion linearizer for compensating frequency-dependent IM distortion,” Proc. 34th European Micro. Conf., pp.1053-1056, 2004.
5. [5] J. Ohkawara, Y. Suzuki, and S. Narahashi, “Fast calculation scheme for frequency characteristic compensator of digital predistortion linearizer,” Proc. Vech. Tech. Conf. Spring, pp.1-5, 2009.
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