Ultra High Power X-Band Amplifier Utilizing non-Uniform Comb Lines for Stabilization

Author:

Kuwta Eigo1,Sugitani Takumi1,Yamasaki Takashi1,Kamo Yoshitaka1,Yamanaka Koji1,Amasuga Hirotaka1,Tsuru Masaomi1

Affiliation:

1. Mitsubishi Electric Corporation,Japan

Publisher

IEEE

Reference20 articles.

1. An X-band Internally Matched GaN Power Amplifier with 705W Peak Power and 51.7% PAE

2. An X-band 500W Internally Matched High Power GaN Amplifier

3. An 8.5–10.0 GHz 310 W GaN HEMT for radar applications;kikuchi;2014 IEEE MTT-S Int Microwave Symp Dig,0

4. X-band 200W AlGaN/GaN HEMT for high power application;nishihara;2011 6th European Microwave Integrated Circuit Conference EuMIC,2011

5. X- and Ku-band internally matched GaN amplifiers with more than 100W output power

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