The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs

Published:2023-09-18 Issue: Volume: Page:
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Container-title:2023 18th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Zervos Christos¹,Beleniotis Petros¹,Krause Sascha¹,Ritter Dan²,Rudolph Matthias¹

Affiliation:

1. Brandenburg University of Technology Cottbus-Senftenberg (BTU),Germany

2. Technion-Israel Institute of Technology,Israel

Funder

Deutsche Forschungsgemeinschaft

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289036.pdf?arnumber=10289036

Reference12 articles.

1. Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

2. Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer;yazdani;2021 International Conference on Compound Semiconductor Manufacturing Technology,2021

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

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1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

2. Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach;IEEE Transactions on Electron Devices;2024-06

3. Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag;physica status solidi (a);2024-04-26

4. Dynamic R_DModeling by Exploiting Gate Current Dependency of Virtual Gate Effect;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18