Dynamic RDModeling by Exploiting Gate Current Dependency of Virtual Gate Effect
Author:
Affiliation:
1. Brandenburg University of Technology Cottbus-Senftenberg (BTU),Germany
2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik,Germany
Funder
Deutsche Forschungsgemeinschaft
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288955.pdf?arnumber=10288955
Reference9 articles.
1. Investigation and reduction of leakage current associated with gate encapsulation by sinx in AlGaN/GaN HFETs;chevtchenko;2011 International Conference on Compound Semiconductor Manufacturing Technology CS MANTECH 2011,2011
2. The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs;zervos;to be presented in 2023 18th European Microwave Integrated Circuits Conference (EuMIC),2023
3. Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow
4. An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT
5. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
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