Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications-Reference-Cited by-同舟云学术

Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 Symposium on VLSI Technology
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Author:

Ha Daewon,Yang C.,Lee J.,Lee S.,Lee S. H.,Seo K.-I.,Oh H. S.,Hwang E. C.,Do S. W.,Park S. C.,Sun M.-C.,Kim D. H.,Lee J. H.,Kang M. I.,Ha S.-S.,Choi D. Y.,Jun H.,Shin H. J.,Kim Y. J.,Lee J.,Moon C. W.,Cho Y. W.,Park S. H.,Son Y.,Park J. Y.,Lee B. C.,Kim C.,Oh Y. M.,Park J. S.,Kim S. S.,Kim M. C.,Hwang K. H.,Nam S. W.,Maeda S.,Kim D.-W.,Lee J.-H.,Liang M. S.,Jung E. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7989855/7998120/07998202.pdf?arnumber=7998202

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