Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)-Reference-Cited by-同舟云学术

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Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)

Published:2023-07-29 Issue: Volume: Page:
ISSN:
Container-title:2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD)
language:
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Author:

Yu Fei¹,Zeng Qi-Ming¹,Song Rong¹,Tang Jian²,Wu Ya-Ting³

Affiliation:

1. Shenzhen Polytechnic,School of Electronics and Communication Engineering,ShenZhen,China

2. Yancheng Teachers University,School of Physical and Electronic Engineering,Yancheng,China

3. Shanghai University,Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute for Advanced Communication and Data Science,Shanghai,China

Funder

National Key Research and Development Program of China

Science and Technology Commission of Shanghai Municipality

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10280770/10280781/10281163.pdf?arnumber=10281163

Reference15 articles.

1. The “Chinese Dream” of developing China’s integrated circuit industry[J];Yangyuan;Science and Technology Review

2. Large-scale integrated circuit devices and integration technology in the post-Moore era[J];Liming;Science in China: Information Science,2018

3. A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications

4. High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

5. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

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