Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models
Author:
Affiliation:
1. Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques,Cottbus,Germany,03046
2. Ferdinand-Braun-Institut,Berlin,Germany,12489
Funder
Deutsche Forschungsgemeinschaft
BMBF
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9923413/9922957/09923511.pdf?arnumber=9923511
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs;IEEE Transactions on Electron Devices;2024-07
2. TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
3. GaN HEMT trap-induced variability through concurrent noise and AC TCAD modelling;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17
4. TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions;Electronics;2023-05-30
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