Error Generation for 3D NAND Flash Memory-Reference-Cited by-同舟云学术

Error Generation for 3D NAND Flash Memory

Published:2022-03-14 Issue: Volume: Page:
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Container-title:2022 Design, Automation & Test in Europe Conference & Exhibition (DATE)
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Author:

Liu Weihua¹,Wu Fei¹,Meng Songmiao¹,Chen Xiang¹,Xie Changsheng¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System, Engineering Research Center of Data Storage Systems and Technology,Ministry of Education of China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9774496/9774497/09774514.pdf?arnumber=9774514

Reference12 articles.

1. A 1 tb 4bcell 5th-generation 3d-nand flash memory with 2ms tprog, 110us tr and 1. 2 gbspin interface;kim;2021 IEEE International Memory Workshop (IMW),0

2. 3-D NAND Technology Achievements and Future Scaling Perspectives

3. Reliability of Solid-State Drives Based on NAND Flash Memory

4. Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

5. Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash

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3. Towards LDPC Read Performance of 3D Flash Memories with Layer-induced Error Characteristics;ACM Transactions on Design Automation of Electronic Systems;2023-04-18

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