Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET-Reference-Cited by-同舟云学术

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Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET

Published:2021-05-30 Issue: Volume: Page:
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Container-title:2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Baba Masakazu,Tawara Takeshi,Morimoto Tadao,Harada Shinsuke,Takei Manabu,Kimura Hiroshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9452126/9452187/09452273.pdf?arnumber=9452273

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric;Microelectronics Journal;2024-09

2. 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance;IEEE Transactions on Electron Devices;2024-09

3. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08

4. Effect of the column design and fabrication method on the reverse recovery characteristics of 1.2 kV SiC-superjunction-MOSFETs;Materials Science in Semiconductor Processing;2024-06

5. A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance;Micromachines;2024-05-23

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