A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance-Reference-Cited by-同舟云学术

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Published:2024-05-23 Issue:6 Volume:15 Page:684
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Ma Rongyao¹²,Wang Ruoyu¹,Fang Hao²,Li Ping²,Zhao Longjie²,Wu Hao¹³^ORCID,Huang Zhiyong¹^ORCID,Tao Jingyu¹,Hu Shengdong¹

Affiliation:

1. School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China

2. China Resources Microelectronics (Chongqing) Limited, Chongqing 401331, China

3. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, China

Abstract

In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance. As a result, the figure of merit (FoM, BV2/Ron,sp) of the proposed new structure is 642% and 39.65% higher than the C-MOS and the SJ-MOS, respectively.

Funder

National Natural Science Foundation of China

Natural Science Foundation Project of CQ CSTC

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/6/684/pdf

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