Author:
Zhang He-Ming ,Cui Xiao-Ying ,Hu Hui-Yong ,Dai Xian-Ying ,Xuan Rong-Xi ,
Abstract
A SOI PMOSFET with SiGe quantum well channel was formed by growing the SiGe film on the Si SOI structure. Not only does the device have the advantage of SOI structure, but also the performance of the device is improved because the carrier mobility in SiGe quantum well is much higher than that in Si. In this paper, the threshold voltage model of strained SiGe SOI quantum well channel PMOSFET is established on the basis of general Si SOI MOSFET, also the model of voltage-current characterisfic is founded. The characteristic of voltage-current, transconductance and leak conductance were simulated and analyzed using MATLAB. The results of the simulation confirm that the strained SiGe SOI quantum well channel PMOSFET performs much better than the conventional PMOSFET.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
11 articles.
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