Progress on the Numerical Calculation of Electrical Characteristics of Strained SiGe Channel P-MOSFET-Reference-Cited by-同舟云学术

Progress on the Numerical Calculation of Electrical Characteristics of Strained SiGe Channel P-MOSFET

Published:2013-05 Issue: Volume:320 Page:465-472
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Yu Jie¹,Wang Chong¹,Yang Yu¹

Affiliation:

1. Yunnan University

Abstract

Recent progress in the computer simulation of strained SiGe channel p-MOSFET performance is reviewed. The electrical characteristics of strained SiGe channel p-MOSFET, such as threshold voltage, subthreshold characteristics, output characteristics, transconductance, quasistatic C-V characteristics and transfer characteristics, and the effects of Ge mole fraction on electrical characteristics, are well discussed. Finally, the development of strained SiGe channel p-MOSFET is prospected.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.320.465.pdf

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