Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Metals and Alloys,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/s11771-017-3527-4.pdf
Reference44 articles.
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2. LEE M L, FITZGERALD E A, BULSARA M T, CURRIE M T, LOCHTEFELD A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors [J]. Journal of Applied Physics, 2005, 97(1): 011101–011127.
3. RIM K, HOYT J L, GIBBONS J F. Fabrication and analysis of deep submicron strained-Si N-MOSFET’s [J]. IEEE Transactions on Electron Devices, 2000, 47(7): 1406–1415.
4. FOSSUM J G, ZHANG W. Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels [J]. IEEE Transactions on Electron Devices, 2003, 50(4): 1042–1049.
5. WANG Bin, ZHANG He-ming, HU Hui-yong, ZHANG Yu-ming, ZHOU Chun-yu, LI Yu-chen. Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology [J]. Journal of Central South University, 2014, 21: 2292–2297.
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