Author:
Xu Tian-Ning ,Wu Hui-Zhen ,Zhang Ying-Ying ,Wang Xiong ,Zhu Xia-Ming ,Yuan Zi-Jian ,
Abstract
Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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