Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current-Reference-Cited by-同舟云学术

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Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current

Published:2009 Issue:1 Volume:12 Page:H26
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Son Kyoung-Seok,Kim Tae-Sang,Jung Ji-Sim,Ryu Myung-Kwan,Park Kyung-Bae,Yoo Byung-Wook,Park KeeChan,Kwon Jang-Yeon,Lee Sang-Yoon,Kim Jong-Min

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference9 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

4. Transparent thin-film transistors with zinc indium oxide channel layer

5. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

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