New high-voltage and high-speed β-Ga2O3 MESFET with amended electric field distribution by an insulator layer
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1140/epjp/s13360-020-00523-4.pdf
Reference19 articles.
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2. W.S. Hwang et al., High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes. Appl. Phys. Lett. 104(20), 203111 (2014). https://doi.org/10.1063/1.4879800
3. Z. Xia et al., β-Ga2O3 delta-doped field-effect transistors with current gain cutoff frequency of 27 GHz. IEEE Electr. Dev. Lett. 40(7), 1052–1055 (2019). https://doi.org/10.1109/LED.2019.2920366
4. J. Bae, H.W. Kim, I.H. Kang, J. Kim, Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors. RSC Adv. 9(17), 9678–9683 (2019). https://doi.org/10.1039/c9ra01163c
5. J. Kim, M.A. Mastro, M.J. Tadjer, J. Kim, Quasi-two-dimensional h-BN/β-Ga2O3 heterostructure metal–insulator–semiconductor field-effect transistor. ACS Appl. Mater. Interfaces 9(25), 21322–21327 (2017). https://doi.org/10.1021/acsami.7b04374
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