Achieving ideal transistor characteristics in conjugated polymer semiconductors-Reference-Cited by-同舟云学术

Achieving ideal transistor characteristics in conjugated polymer semiconductors

Published:2023-06-02 Issue:22 Volume:9 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Xiao Mingfei¹^ORCID,Ren Xinglong¹^ORCID,Ji Kangyu¹,Chung Sein²^ORCID,Shi Xiaoyu³^ORCID,Han Jie³,Yao Zefan⁴^ORCID,Tao Xudong⁵^ORCID,Zelewski Szymon J.¹⁶^ORCID,Nikolka Mark¹,Zhang Youcheng¹^ORCID,Zhang Zhilong¹^ORCID,Wang Zichen¹,Jay Nathan⁵^ORCID,Jacobs Ian¹^ORCID,Wu Weijing⁷,Yu Han⁸^ORCID,Abdul Samad Yarjan⁹^ORCID,Stranks Samuel D.¹^ORCID,Kang Boseok¹⁰^ORCID,Cho Kilwon²^ORCID,Xie Jin³,Yan He⁸^ORCID,Chen Shangshang³^ORCID,Sirringhaus Henning¹^ORCID

Affiliation:

1. Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.

2. Department of Chemical Engineering, Pohang University of Science and Technology Pohang, Pohang 790-784, South Korea.

3. State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. of China.

4. College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. of China.

5. Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave., Cambridge CB3 0FA, UK.

6. Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.

7. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. of China.

8. Department of Chemistry, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, Energy Institute and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration & Reconstruction, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. of China.

9. Department of Aerospace Engineering, Khalifa University, Abu Dhabi 127788, UAE.

10. SKKU Advanced Institute of Nanotechnology and Department of Nano Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Abstract

Organic thin-film transistors (OTFTs) with ideal behavior are highly desired, because nonideal devices may overestimate the intrinsic property and yield inferior performance in applications. In reality, most polymer OTFTs reported in the literature do not exhibit ideal characteristics. Supported by a structure-property relationship study of several low-disorder conjugated polymers, here, we present an empirical selection rule for polymer candidates for textbook-like OTFTs with high reliability factors (100% for ideal transistors). The successful candidates should have low energetic disorder along their backbones and form thin films with spatially uniform energetic landscapes. We demonstrate that these requirements are satisfied in the semicrystalline polymer PffBT4T-2DT, which exhibits a reliability factor (~100%) that is exceptionally high for polymer devices, rendering it an ideal candidate for OTFT applications. Our findings broaden the selection of polymer semiconductors with textbook-like OTFT characteristics and would shed light upon the molecular design criteria for next-generation polymer semiconductors.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Link

https://www.science.org/doi/pdf/10.1126/sciadv.adg8659

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