Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution-Reference-Cited by-同舟云学术

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

Published:2017-03-03 Issue:3 Volume:3 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Faber Hendrik¹,Das Satyajit¹,Lin Yen-Hung¹,Pliatsikas Nikos²,Zhao Kui³^ORCID,Kehagias Thomas²^ORCID,Dimitrakopulos George²^ORCID,Amassian Aram³,Patsalas Panos A.²,Anthopoulos Thomas D.¹³^ORCID

Affiliation:

1. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.

2. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece.

3. Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.

Abstract

Engineering of solution-grown metal oxide heterointerfaces presents an alternative strategy for thin-film transistor development.

Funder

European Research Council

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference58 articles.

1. High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

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