Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Author:

Wang Yi12ORCID,Zhu Dapeng1ORCID,Yang Yumeng1ORCID,Lee Kyusup1ORCID,Mishra Rahul1,Go Gyungchoon3,Oh Se-Hyeok4,Kim Dong-Hyun5,Cai Kaiming1ORCID,Liu Enlong1ORCID,Pollard Shawn D.1,Shi Shuyuan1ORCID,Lee Jongmin1,Teo Kie Leong1ORCID,Wu Yihong1ORCID,Lee Kyung-Jin3456ORCID,Yang Hyunsoo1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore.

2. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China.

3. Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.

4. Department of Nano-Semiconductor and Engineering, Korea University, Seoul 02841, Korea.

5. Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Korea.

6. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea.

Abstract

Toward magnonic devices The field of magnonics aims to use spin waves (SWs) and their associated quasiparticles—magnons—as carriers of information. Compared with the movement of charge in conventional electronics, a major advantage of SWs is reduced Joule heating. However, SWs are trickier to direct and control. Two groups now go a step further toward magnon-based devices. Han et al. show that in multilayer films, domain walls can be used to change the phase and magnitude of a spin wave. Wang et al. demonstrate how magnon currents can be used to switch the magnetization of an adjacent layer. Science , this issue p. 1121 , p. 1125

Funder

Agency for Science, Technology and Research

National Research Foundation of Korea

Fundamental Research Funds for the Central Universities

National Research Foundation Singapore

KIST institutional program

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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