A nonvolatile magnon field effect transistor at room temperature

Abstract

Abstract Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a novel and non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor (FET) in modern electronics, creating its magnonic equivalent is highly desired but remains as a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon FET operating at room temperature. The device consists of a ferromagnetic insulator (YIG: Y3Fe5O12) deposited on a ferroelectric substrate (PMN-PT: Pb(Mg1/3Nb2/3)0.7Ti0.3O3), with three Pt stripes patterned on YIG as the injector, gate, and detector, respectively. The magnon transport in YIG can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices.