Affiliation:
1. School of Physics and Telecommunications Engineering, South China Normal University, Guangzhou, China
Abstract
In the past few years, thermal through silicon via (TTSV) has been experimentally investigated as an effective heat dissipation path. Although a lot of heat dissipation-related issues have been solved in 3-D integrated circuit (3-D-IC), there are neglections in TTSV placement with non-uniform heat sources so far. In this study, a unique optimization is proposed to locate TTSV while effectively alleviating hot spots in 3-D-IC. The thermal dissipation of non-uniform heat sources are studied using the finite element method. The simulation results show that the minimum temperature is reduced by 2.1% compared with peak temperature in the single-layer chip, and by 1.9% in the three-layer chip.
Publisher
National Library of Serbia
Subject
Renewable Energy, Sustainability and the Environment