Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes

Published:2013-11-01 Issue:11 Volume:6 Page:111005
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Chung Roy Byung-Kyu,Kim Donghyun,Lim Sung-Keun,Choi Jun-Sung,Kim Kyoung-Jun,Lee Bo-Hyun,Jung Kyung Sub,Kim-Lee Hyun-Joon,Lee Won Jo,Park Bongmo,Woo Kwangje

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=11/a=111005/pdf

Reference23 articles.

1. Prospects for LED lighting

2. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

3. Efficiency droop in nitride-based light-emitting diodes

4. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

5. Bulk GaN crystals grown by HVPE

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