Bulk GaN based violet light-emitting diodes with high efficiency at very high current density-Reference-Cited by-同舟云学术

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Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

Published:2012-11-26 Issue:22 Volume:101 Page:223509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cich Michael J.,Aldaz Rafael I.,Chakraborty Arpan,David Aurelien,Grundmann Michael J.,Tyagi Anurag,Zhang Meng,Steranka Frank M.,Krames Michael R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4769228

Reference13 articles.

1. Auger recombination in InGaN measured by photoluminescence

2. New developments in green LEDs

3. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

4. Growth and characterization of freestanding GaN substrates

5. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

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