Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Reference27 articles.
1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
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3. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
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5. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
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