Room-temperature GaAs/InP wafer bonding with extremely low resistance-Reference-Cited by-同舟云学术

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Room-temperature GaAs/InP wafer bonding with extremely low resistance

Published:2014-10-07 Issue:11 Volume:7 Page:112301
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Uchida Shiro,Watanabe Tomomasa,Yoshida Hiroshi,Tange Takashi,Arimochi Masayuki,Ikeda Masao,Dai Pan,He Wei,Ji Lian,Lu Shulong,Yang Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=11/a=112301/pdf

Reference13 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

3. Direct-bonded GaAs∕InGaAs tandem solar cell

4. Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Intermediate Connection of Subcells in Si‐based Tandem Solar Cells;Small Methods;2023-08-02

2. Electrical Analysis for Wafer-Bonded Interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs;IEEE Electron Device Letters;2021-06

3. Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy;Japanese Journal of Applied Physics;2020-10-29

4. The investigation of wafer-bonded multi-junction solar cell grown by MBE;Journal of Crystal Growth;2019-06

5. Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance;Applied Physics Express;2018-09-07

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