Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations-Reference-Cited by-同舟云学术

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Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Published:2018-03-08 Issue:4 Volume:11 Page:041001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Sawada Naoki,Narita Tetsuo,Kanechika Masakazu,Uesugi Tsutomu,Kachi Tetsu,Horita Masahiro,Kimoto Tsunenobu,Suda Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=4/a=041001/pdf

Reference33 articles.

1. High-breakdown-voltage pn-junction diodes on GaN substrates

2. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

3. Planar Nearly Ideal Edge-Termination Technique for GaN Devices

4. Electrical characterization of GaN p-n junctions with and without threading dislocations

5. High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates

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1. A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall;physica status solidi (RRL) – Rapid Research Letters;2024-04-02

2. Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy;physica status solidi (b);2024-03-19

3. Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers;physica status solidi (b);2024-03-04

4. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy;Applied Physics Letters;2024-01-29

5. Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence;physica status solidi (b);2024-01-07

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