MoSbTe for high-speed and high-thermal-stability phase-change memory applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=4/a=041401/pdf
Reference19 articles.
1. Towards a universal memory?
2. Thin Films of Ge–Sb–Te-Based Phase Change Materials: Microstructure and in Situ Transformation
3. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
4. Topological Insulating inGeTe/Sb2Te3Phase-Change Superlattice
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1. Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing;Advanced Functional Materials;2023-02-28
2. PCRAM electronic synapse measurements based on pulse programming engineering;Microelectronic Engineering;2022-04
3. Effect of Mo doping on phase change performance of Sb2Te3 *;Chinese Physics B;2021-08-01
4. Phase Change Random Access Memory for Neuro‐Inspired Computing;Advanced Electronic Materials;2021-03-17
5. High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications;Applied Physics Express;2019-11-20
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