Effect of Mo doping on phase change performance of Sb2Te3 *

Abstract

Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 °C. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4 × 105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.