Phase Change Random Access Memory for Neuro‐Inspired Computing-Reference-Cited by-同舟云学术

Phase Change Random Access Memory for Neuro‐Inspired Computing

Published:2021-03-17 Issue:6 Volume:7 Page:2001241
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wang Qiang¹,Niu Gang¹,Ren Wei¹,Wang Ruobing²,Chen Xiaogang²,Li Xi²,Ye Zuo‐Guang³,Xie Ya‐Hong⁴,Song Sannian²,Song Zhitang²

Affiliation:

1. Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 China

2. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 China

3. Department of Chemistry and 4D LABS Simon Fraser University Burnaby British Columbia V5A 1S6 Canada

4. Department of Materials Science and Engineering University of California, Los Angeles Los Angeles CA 90095 USA

Funder

Fundamental Research Funds for the Central Universities

National Key Laboratory of Electronic Thin Films and Integrated Devices

Natural Sciences and Engineering Research Council of Canada

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001241

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