Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=6/a=061301/pdf
Reference37 articles.
1. Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates
2. Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
3. Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
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1. Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method;Materials Science in Semiconductor Processing;2024-06
2. Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching;Applied Physics Letters;2023-07-17
3. Characterization of horseshoe-shaped defects in 4H-SiC thick homoepitaxial layers;Journal of Crystal Growth;2022-04
4. Features and Prospects for Epitaxial Graphene on SiC;Handbook of Graphene;2019-06-17
5. Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition;Journal of Crystal Growth;2019-02
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