250 °C-Operated sandwich-structured all-SiC power module-Reference-Cited by-同舟云学术

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250 °C-Operated sandwich-structured all-SiC power module

Published:2015-01-29 Issue:4S Volume:54 Page:04DP06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kato Fumiki,Simanjorang Rejeki,Lang Fengqun,Nakagawa Hiroshi,Yamaguchi Hiroshi,Sato Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/JJAP.54.04DP06/pdf

Reference33 articles.

1. Silicon carbide benefits and advantages for power electronics circuits and systems

2. Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

3. SiC power devices for industrial applications

4. A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effect of Aluminum Oxide Layer and Annealing Atmosphere on Diffusion Behavior of Ni/Al Film;Journal of the Japan Institute of Metals and Materials;2023-03-01

2. Effect of Gate Pad Layout on Thermal Impedance of SiC-MOSFET;2022 International Conference on Electronics Packaging (ICEP);2022-05-11

3. Clarification of Error Factors in Thermal Impedance Measurements Using SiC-MOSFET Body Diodes Compared to SWITCH-MOS;2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2021-09-23

4. Study on Gate Bias Voltage Application Conditions to Prevent the Knee Voltage Shift of the SiC–MOSFET Body Diode Depending on Gate Bias Voltage during Transient Temperature Measurements;Transactions of The Japan Institute of Electronics Packaging;2020

5. Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module;ECS Transactions;2018-07-23

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