The Effect of Aluminum Oxide Layer and Annealing Atmosphere on Diffusion Behavior of Ni/Al Film-Reference-Cited by-同舟云学术

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The Effect of Aluminum Oxide Layer and Annealing Atmosphere on Diffusion Behavior of Ni/Al Film

Published:2023-03-01 Issue:3 Volume:87 Page:81-87
ISSN:0021-4876
Container-title:Journal of the Japan Institute of Metals and Materials
language:en
Short-container-title:J. Japan Inst. Metals and Materials

Author:

Koshiba Keiko¹,Tatsumi Kohei¹

Affiliation:

1. Graduate School of Information, Production and Systems, Waseda University

Publisher

Japan Institute of Metals

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/jinstmet/87/3/87_J2022039/_pdf

Reference50 articles.

1. 1) T.P. Chow: Microelectron. Eng. 83 (2006) 112-122. doi:10.1016/j.mee.2005.10.057

2. 2) R.A. Wood and T.E. Salem: IEEE Trans. Power Electron. 26 (2011) 2504-2511. doi:10.1109/TPEL.2011.2108670

3. 3) Y. Yonezawa et al.: Proc. 2013 IEEE Int. Electron Devices Meeting, (2013) pp. 6.6.1-6.6.4.

4. 4) H. Takasu: Oyo Buturi 82 (2013) 227-233. doi:10.11470/oubutsu.82.3_227

5. 5) I. Ben-Yaacov, Y.K. Seck, U.K. Mishra and S.P. DenBaars: J. Appl. Phys. 95 (2004) 2073-2078. doi:10.1063/1.1641520

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