Molecular dynamics study on the formation of dipole layer at high-k/SiO2interfaces-Reference-Cited by-同舟云学术

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Molecular dynamics study on the formation of dipole layer at high-k/SiO2interfaces

Published:2014-07-16 Issue:8S1 Volume:53 Page:08LB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuriyama Ryo,Hashiguchi Masahiro,Takahashi Ryusuke,Shimura Kosuke,Ogura Atsushi,Satoh Shinichi,Watanabe Takanobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S1/a=08LB02/pdf

Reference27 articles.

1. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors

2. Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect

3. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

4. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

5. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO₂/SiO₂ interface engineering;Journal of Physics D: Applied Physics;2024-06-24

2. Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting;Japanese Journal of Applied Physics;2020-05-11

3. Direct evaluation of electrical dipole moment and oxygen density ratio at high-kdielectrics/SiO2interface by X-ray photoelectron spectroscopy analysis;Japanese Journal of Applied Physics;2018-03-15

4. (Invited) Molecular Dynamics of Dipole Layer Formation at High-k/SiO2Interface;ECS Transactions;2017-08-16

5. Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systems;Microelectronic Engineering;2017-06

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