Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls-Reference-Cited by-同舟云学术

Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

Published:2014-06-01 Issue:6 Volume:53 Page:065503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Elias Doron Cohen,Sivananthan Abirami,Zhang Chong,Keller Stacia,Chiang Han-Wei,Law Jeremy J. M.,Thibeault Brain J.,Mitchell William J.,Lee Sanghoon,Carter Andy D.,Huang Cheng-Ying,Chobpattana Varistha,Stemmer Susanne,Denbaars Steve P.,Coldren Larry A.,Rodwell Mark J. W.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=6/a=065503/pdf

Reference15 articles.

1. Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

2. Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

3. Ultra-high aspect-ratio FinFET technology

4. III-V gate-all-around nanowire MOSFET process technology: From 3D to 4D

5. Molecular Layer Epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions;Applied Physics Reviews;2021-06

2. Atomic layer epitaxy of InAs with high silicon doping concentration;Journal of Vacuum Science & Technology A;2020-09

3. Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain;Solid-State Electronics;2016-12