Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain-Reference-Cited by-同舟云学术

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Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain

Published:2016-12 Issue: Volume:126 Page:92-95
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kise Nobukazu,Kinoshita Haruki,Yukimachi Atsushi,Kanazawa Toru,Miyamoto Yasuyuki

Funder

Grant-in Aid for Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Nanometre-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011

2. High performance III–V MOS technologies;Rodwell,2014

3. Dewey G, Chu-Kung B, Kotlyar R, Metz M, Mukherjee N, Radosavljevic M. III–V Field effect transistors for future ultra-low power applications. VLSIT; 2012. p. 45.

4. Benchmarking of III–V n-MOSFET maturity and feasibility for future CMOS;Doornbos;IEEE Electron Dev Lett,2010

5. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1A/mm;Xuan;IEEE Electron Dev Lett,2008

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Etching of Silicon in Planar Nanochannels;Langmuir;2024-04-23

2. Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric;Materials Today Communications;2021-03

3. Regrown source/drain in InGaAs multi-gate MOSFETs;Journal of Crystal Growth;2019-09

4. Miniaturization of CMOS;Micromachines;2019-04-30

5. The Challenges of Advanced CMOS Process from 2D to 3D;Applied Sciences;2017-10-13

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