Wet Etching of Silicon in Planar Nanochannels-Reference-Cited by-同舟云学术

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Wet Etching of Silicon in Planar Nanochannels

Published:2024-04-23 Issue:18 Volume:40 Page:9501-9508
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Zhong Yiding¹,Park Dohyun¹^ORCID,Xiao Siyang¹^ORCID,Hu Shan²,Zheng Liangwei¹,Duan Chuanhua¹³^ORCID

Affiliation:

1. Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215, United States

2. TEL Technology Center, America, LLC, Albany, New York 12203, United States

3. Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States

Funder

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.4c00056

Reference47 articles.

1. Considerations for Ultimate CMOS Scaling

2. Reviewing the Evolution of the NAND Flash Technology

3. Transient Clustering of Reaction Intermediates during Wet Etching of Silicon Nanostructures

4. The Challenges of Advanced CMOS Process from 2D to 3D

5. Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain

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