Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3for passivation of crystal Si solar cells-Reference-Cited by-同舟云学术

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Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3for passivation of crystal Si solar cells

Published:2014-07-17 Issue:8S1 Volume:53 Page:08LC04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Meng,Shin Hong-Sik,Jeong Kwang-Seok,Oh Sung-Kwen,Lee Horyeong,Han Kyumin,Lee Yongwoo,Lee Song-Jae,Lee Ga-Won,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S1/a=08LC04/pdf

Reference31 articles.

1. Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

2. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

3. Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

4. Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment;Applied Physics A;2018-03-26

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