Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. SiC Power Devices – An Overview
2. 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
3. 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
4. 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
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1. Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films;Journal of Crystal Growth;2024-05
2. Characterization of dislocation etch pits by molten KOH etching in n- and p-type 4H–SiC epilayers doped by ion implantation;Materials Science in Semiconductor Processing;2023-10
3. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability;Journal of Applied Physics;2023-08-18
4. Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2023-08
5. Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules;The Journal of Physical Chemistry C;2023-07-12
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