N–H related defects in GaAsN grown through chemical beam epitaxy-Reference-Cited by-同舟云学术

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N–H related defects in GaAsN grown through chemical beam epitaxy

Published:2014-02-13 Issue:3 Volume:53 Page:031001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohshita Yoshio,Ikeda Kazuma,Suzuki Hidetoshi,Machida Hideaki,Sudoh Hiroshi,Tanaka Tomohiro,Honda Takahiko,Inagaki Makoto,Yamaguchi Masafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. 1-eV solar cells with GaInNAs active layer

2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

3. Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells

4. Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures

5. Solar cell efficiency tables (version 41)

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells;Japanese Journal of Applied Physics;2018-07-11

2. N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy;Journal of Crystal Growth;2017-06

3. Chemical beam epitaxy of GaAs 1-x N x using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As 2 , H 2 and N 2;Journal of Crystal Growth;2017-06

4. Double acceptor in p-type GaAsN grown by chemical beam epitaxy;Journal of Crystal Growth;2015-12

5. Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes;Journal of Alloys and Compounds;2015-11

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