Double acceptor in p-type GaAsN grown by chemical beam epitaxy-Reference-Cited by-同舟云学术

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Double acceptor in p-type GaAsN grown by chemical beam epitaxy

Published:2015-12 Issue: Volume:432 Page:45-48
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Elleuch Omar,Wang Li,Lee Kan-Hua,Ikeda Kazuma,Kojima Nobuaki,Ohshita Yoshio,Yamaguchi Masafumi

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Ministry of Economy, Trade and Industry (METI), Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

4. Band Anticrossing in III-N-V Alloys

5. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

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