N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy-Reference-Cited by-同舟云学术

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N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy

Published:2017-06 Issue: Volume:468 Page:581-584
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Elleuch Omar,Wang Li,Lee Kan-Hua,Ikeda Kazuma,Kojima Nobuaki,Ohshita Yoshio,Yamaguchi Masafumi

Funder

Ministry of Education, Culture, Sports, Science and Technology

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Solar cell efficiency tables (version 41)

2. Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures

3. Band gaps of GaPN and GaAsN alloys

4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

5. 1-eV solar cells with GaInNAs active layer

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2. Fabrication of Cu-MOF-Derived Cu/Cu_xO/C Bifunctional Materials for Light and Dark Catalytic Properties;Inorganic Chemistry;2024-03-30

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