Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells-Reference-Cited by-同舟云学术

Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells

Published:2016-04-19 Issue:5S Volume:55 Page:05FJ11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furuta Takashi,Matsui Kenjo,Horikawa Kosuke,Ikeyama Kazuki,Kozuka Yugo,Yoshida Shotaro,Akagi Takanobu,Takeuchi Tetsuya,Kamiyama Satoshi,Iwaya Motoaki,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FJ11/pdf

Reference25 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

5. Characteristics of InGaN laser diodes in the pure blue region

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