Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy-Reference-Cited by-同舟云学术

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Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy

Published:2016-08-04 Issue:9 Volume:55 Page:091301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeuchi Kazuma,Suda Kohei,Yokogawa Ryo,Usuda Koji,Sawamoto Naomi,Ogura Atsushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=9/a=091301/pdf

Reference42 articles.

1. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

2. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

3. Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization

4. Electronic properties of metastableGexSn1−xalloys

5. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

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1. Rashba Metamaterials and Metasurfaces with Zero Reflectivity and Effect of Surface States in Ultrathin Metal Films;ACS Applied Materials & Interfaces;2024-01-17

2. Local Alloy Order in a Ge1−xSnx/Ge Epitaxial Layer;Physical Review Applied;2023-08-08

3. Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga₂O₃;Applied Physics Letters;2022-01-24

4. Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress;Nanotechnology;2021-06-09

5. Stress/strain characterization in electronic packaging by micro-Raman spectroscopy: A review;Microelectronics Reliability;2021-03

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