Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering-Reference-Cited by-同舟云学术

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Published:2016-04-20 Issue:5S Volume:55 Page:05FD08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohtsuka Makoto,Takeuchi Hiroto,Fukuyama Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FD08/pdf

Reference30 articles.

1. GaN, AlN, and InN: A review

2. Surface acoustic wave velocity in single-crystal AlN substrates

3. Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications

4. Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate

5. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

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