Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions-Reference-Cited by-同舟云学术

Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions

Published:2016-09-07 Issue:10 Volume:55 Page:104101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeyama Akinori,Matsuda Takuma,Yokoseki Takashi,Mitomo Satoshi,Murata Koichi,Makino Takahiro,Onoda Shinobu,Okubo Shuichi,Tanaka Yuki,Kandori Mikio,Yoshie Toru,Hijikata Yasuto,Ohshima Takeshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=10/a=104101/pdf

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1. Emergency response to the nuclear accident at the Fukushima Daiichi Nuclear Power Plants using mobile rescue robots

2. Monitoring Performance of the Cameras under the High Dose-Rate Gamma Ray Environments

3. Project strategy for clean-up of sedimentary radioactive material in Fukushima bay areas using snake-like robotics

4. Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation

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