Author:
Cao Rongxing,Wang Kejia,Meng Yang,Li Linhuan,Zhao Lin,Han Dan,Liu Yang,Zheng Shu,Li Hongxia,Jiang Yuqi,Zeng Xianghua,Xue Yuxiong
Abstract
The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power metal–oxide–semiconductor field effect transistors (MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.
Subject
General Physics and Astronomy