Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1−xMgxO3−δ
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=10/a=108001/pdf
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1. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
2. Ionization rates and critical fields in 4H silicon carbide
3. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
4. 2.6 kV 4H-SiC lateral DMOSFETs
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1. Growth behavior of cristobalite SiO2 coating on 4H–SiC surface via high-temperature oxidation;Ceramics International;2024-09
2. First-principles study on Al doped 4H-SiC;SCIENTIA SINICA Physica, Mechanica & Astronomica;2019-10-15
3. Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping;14th National Conference on Laser Technology and Optoelectronics (LTO 2019);2019-05-17
4. Evaluation of effective length of the enhanced oxidation of active oxygen produced using SrTixMg1−xO3−δcatalyst for low-temperature oxidation;Japanese Journal of Applied Physics;2018-03-16
5. Preparation of p-Type Heavily-Doped 4H-SiC by Laser Irradiation of Solid Al Film;Chinese Journal of Lasers;2018
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